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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1770 SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The PA1770 is a P-channel MOS Field Effect Transistor designed for power management applications of portable machines. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 PA1770G FEATURES * Dual chip type * Low on-resistance RDS(on)1 = 37 m MAX. (VGS = -4.5 V, ID = -3.0 A) RDS(on)2 = 39 m MAX. (VGS = -4.0 V, ID = -3.0 A) RDS(on)3 = 59 m MAX. (VGS = -2.5 V, ID = -3.0 A) * Low input capacitance Ciss = 1300 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 Note3 Note3 VDSS VGSS ID(DC) ID(pulse) PT PT PT PT Tch Tstg -20 V V A A W W W W C C ! 12 ! 6.0 ! 24 0.40 0.75 1.7 2.0 150 -55 to +150 Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) 5 5 Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on FR4 Board of 1600 mm x 1.6 mm, Drain Pad size : 4.5 mm x 35 m, TA = 25C 2 2 5 3. Mounted on ceramic substrate of 1200 mm x 2.2 mm, TA = 25C 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14055EJ1V0DS00 (1st edition) Date Published November 1999 NS CP(K) Printed in Japan The mark 5 shows major revised points. (c) 1999 PA1770 5 ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = -4.5 V, ID = -3.0 A VGS = -4.0 V, ID = -3.0 A VGS = -2.5 V, ID = -3.0 A VDS = -10 V, ID = 1 mA VDS = -10 V, ID = -3.0 A VDS = -20 V, VGS = 0 V VGS = ! 12 V, VDS = 0 V VDS = -10 V VGS = 0 V f = 1 MHz ID = -3.0 A VGS(on) = -4.5 V VDD = -10 V RG = 10 ID = -6.0 A VDD = -16 V VGS = -4.5 V IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 100 A / s 1300 325 155 25 110 130 140 11 2.0 4.0 0.8 60 40 -0.5 5.0 MIN. TYP. 28 29.5 44 -1.0 11 -1 MAX. 37 39 59 -1.5 UNIT m m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC ! 10 TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS IG = 2 mA VGS(on) 90 % VGS Wave Form RL VDD 0 10 % PG. 50 VGS 0 = 1 s Duty Cycle 1 % ID Wave Form 2 Data Sheet G14055EJ1V0DS00 PA1770 5 TYPICAL CHARACTERISTICS(TA = 25 C, All terminals are connected.) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 73.5 C/W 10 1 0.1 0.01 0.001 0.00001 Mounted on ceramic Single Pulse substrate of 1200 mm 2 x 2.2 mm Single Pulse , 1 unit 0.0001 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 70 60 50 40 ID = -3.0 A 30 20 10 0 0 -2 -4 -6 -8 -10 ID = -6.0 A Pulsed |yfs| - Forward Transfer Admittance - S 100 10 VDS = -10 V Pulsed TA = -50C TA = -25C TA = 25C TA = 75C TA = 125C TA = 150C 1 0 -0.1 -1 -10 -100 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m VGS(off) - Gate to Source Cut-off Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 VGS = -2.5 V Pulsed GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -1.5 VDS = -10 V ID = 1 mA 60 -1.0 40 VGS = -4.0 V VGS = -4.5 V -0.5 20 0 -0.1 -1 -10 -100 -0 -75 -50 -25 0 25 50 75 100 125 150 ID - Drain Current - A Tch - Channel Temperature - C Data Sheet G14055EJ1V0DS00 3 PA1770 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100.0 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VF(S-D) - Diode Forward Current - A Pulsed VGS = -2.5 V 80.0 10 VGS = 0 V 1 60.0 VGS = -2.5 V VGS = -4.0 V 40.0 VGS = -4.5 V 20.0 0.0 -50 ID = -3.0 A -25 0 25 50 75 100 125 150 0.1 0.01 0.00 0.50 1.00 1.50 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 1000 Ciss Coss td(on), tr, td(off), tf - Switching Time - ns 10000 Ciss, Coss, Crss - Capacitance - pF td(off) 100 tf tr td(on) 10 VDD = -16 V VGS = -4.5V RG = 10 -1 ID - Drain Current - A -10 100 Crss 10 VGS = 0 V f = 1 MHz -1 -10 -100 VDS - Drain to Source Voltage - V 1 -0.1 1 -0.1 REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/ns VGS = 0 V -25 -20 -15 -10 -5 0 0 VDS VDD = -16 V VDD = -10 V VDD = -4 V VGS -5 -4 -3 -2 -1 0 16 1000 100 10 1 0.1 1 10 100 2 4 6 8 10 12 14 ID - Drain Current - A QG - Gate Charge - nC 4 Data Sheet G14055EJ1V0DS00 VGS - Gate to Source Voltage - V 10000 -30 -6 PA1770 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C 2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80 2 unit 1 unit Mounted on ceramic substrate of 1200 mm 2 x 2.2 mm 100 120 140 160 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA -100 TA = 25 C Single Pulse ID(pulse) (a RDS t V (o n) G L S = im -4 ite .5 d V) PW -30 PW DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed -25 ID - Drain Current - A = 0 10 ID - Drain Current - A -10 ID(DC) -20 -15 VGS = -4.5 V VGS = -4.0 V VGS = -2.5 V s = 1 m s PW = PW = 10 0 m 10 m s Po we s -1 Mounted on ceramic substrate of 2 1200 mm x 2.2 mm -0.1 1unit -10 -5 rD iss 0 -0.1 -1 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS -100 -10 -1 -0.1 -0.01 VDS = -10 V Pulsed ipa tio n Lim ite d -10 -100 -0 -0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VDS - Drain to Source Voltage - V ID - Drain Current - A TA = 150C TA = 125C TA = 75C -0.001 0 TA = 25C TA = -25C TA = -50C -1 -2 -3 VGS - Gate to Source Voltage - V Data Sheet G14055EJ1V0DS00 5 PA1770 PACKAGE DRAWING (Unit : mm) Power SOP8 8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 0.3 4.4 +0.10 -0.05 EQUIVALENT CIRCUIT (1/2 circuit) Drain 1 4 5.37 MAX. Gate 0.8 Body Diode 1.44 1.8 MAX. 0.15 Gate Protection Diode 0.5 0.2 0.10 Source 0.05 MIN. 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet G14055EJ1V0DS00 PA1770 [MEMO] Data Sheet G14055EJ1V0DS00 7 PA1770 * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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